PartNumber | IDH06G65C5 D0665C5 | IDH06G65C5 | IDH06G65C5XKSA1 |
Description | Schottky Diodes & Rectifiers SIC DIODES | Schottky Diodes & Rectifiers SIC DIODES | |
Manufacturer | - | Infineon Technologies | Infineon Technologies |
Product Category | - | Diodes, Rectifiers - Single | Diodes, Rectifiers - Single |
Series | - | thinQ! | IDH06G65 |
Packaging | - | Tube | Tube |
Part Aliases | - | IDH06G65C5XK IDH06G65C5XKSA1 SP000925202 | IDH06G65C5 IDH06G65C5XK SP000925202 |
Unit Weight | - | 0.211644 oz | 0.211644 oz |
Mounting Style | - | Through Hole | Through Hole |
Package Case | - | TO-220-2 | TO-220-2 |
Mounting Type | - | Through Hole | - |
Supplier Device Package | - | PG-TO220-2 | - |
Speed | - | No Recovery Time > 500mA (Io) | - |
Diode Type | - | Silicon Carbide Schottky | - |
Current Reverse Leakage Vr | - | 210μA @ 650V | - |
Voltage Forward Vf Max If | - | 1.7V @ 6A | - |
Voltage DC Reverse Vr Max | - | 650V | - |
Current Average Rectified Io | - | 6A (DC) | - |
Reverse Recovery Time trr | - | 0ns | - |
Capacitance Vr F | - | 190pF @ 1V, 1MHz | - |
Operating Temperature Junction | - | -55°C ~ 175°C | - |
Product | - | - | Schottky Silicon Carbide Diodes |
Technology | - | - | SiC |
Pd Power Dissipation | - | - | 62 W |
Maximum Operating Temperature | - | - | + 175 C |
Minimum Operating Temperature | - | - | - 55 C |
If Forward Current | - | - | 6 A |
Vrrm Repetitive Reverse Voltage | - | - | 650 V |
Ifsm Forward Surge Current | - | - | 54 A |