IGB20N60

IGB20N60H3 vs IGB20N60H3ATMA1 vs IGB20N60H3 G20H603

 
PartNumberIGB20N60H3IGB20N60H3ATMA1IGB20N60H3 G20H603
DescriptionIGBT Transistors 600v Hi-Speed SW IGBTIGBT Transistors IGBT PRODUCTS
ManufacturerInfineonInfineon-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSY--
TechnologySiSi-
Package / CaseTO-263-3TO-263-3-
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.95 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C40 A--
Pd Power Dissipation170 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesHighSpeed 3HighSpeed 3-
PackagingReelReel-
BrandInfineon TechnologiesInfineon Technologies-
Gate Emitter Leakage Current100 nA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity1000--
SubcategoryIGBTsIGBTs-
TradenameTRENCHSTOPTRENCHSTOP-
Part # AliasesIGB20N60H3ATMA1 IGB2N6H3XT SP000852232IGB20N60H3 IGB2N6H3XT SP000852232-
Unit Weight0.077603 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IGB20N60H3 IGBT Transistors 600v Hi-Speed SW IGBT
IGB20N60H3ATMA1 IGBT 600V 40A 170W TO263-3
Infineon Technologies
Infineon Technologies
IGB20N60H3ATMA1 IGBT Transistors IGBT PRODUCTS
IGB20N60H3 G20H603 New and Original
IGB20N60H3 IGBT Transistors 600v Hi-Speed SW IGBT
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