IGB30N60T

IGB30N60T vs IGB30N60TATMA1 vs IGB30N60T PB-FREE

 
PartNumberIGB30N60TIGB30N60TATMA1IGB30N60T PB-FREE
DescriptionIGBT Transistors LOW LOSS IGBT TECH 600V 30AIGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop
ManufacturerInfineonInfineon-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSY--
TechnologySiSi-
Package / CaseTO-263-3TO-263-3-
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.95 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C60 A--
Pd Power Dissipation187 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesTRENCHSTOP IGBTTRENCHSTOP IGBT-
PackagingReelReel-
Height4.4 mm--
Length10 mm--
Width9.25 mm--
BrandInfineon TechnologiesInfineon Technologies-
Gate Emitter Leakage Current100 nA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity1000--
SubcategoryIGBTsIGBTs-
TradenameTRENCHSTOPTRENCHSTOP-
Part # AliasesIGB30N60TATMA1 IGB3N6TXT SP000095765IGB30N60T IGB3N6TXT SP000095765-
Unit Weight0.068654 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IGB30N60T IGBT Transistors LOW LOSS IGBT TECH 600V 30A
IGB30N60TATMA1 IGBT 600V 60A 187W TO263-3-2
Infineon Technologies
Infineon Technologies
IGB30N60TATMA1 IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop
IGB30N60T PB-FREE New and Original
IGB30N60T IGBT Transistors LOW LOSS IGBT TECH 600V 30A
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