IGW25N

IGW25N120H3 vs IGW25N120 vs IGW25N120A

 
PartNumberIGW25N120H3IGW25N120IGW25N120A
DescriptionIGBT Transistors IGBT PRODUCTS
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.05 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C50 A--
Pd Power Dissipation326 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesHighSpeed 3--
PackagingTube--
BrandInfineon Technologies--
Gate Emitter Leakage Current600 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIGW25N120H3FKSA1 IGW25N12H3XK SP000674424--
Unit Weight1.340411 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IGW25N120H3 IGBT Transistors IGBT PRODUCTS
IGW25N120H3FKSA1 IGBT Transistors IGBT PRODUCTS
IGW25N120H3FKSA1 IGBT 1200V 50A 326W TO247-3
IGW25N120 New and Original
IGW25N120A New and Original
IGW25N120H3,G25H1203 New and Original
IGW25N120T New and Original
IGW25N120H3XK IGBT Transistors IGBT PRODUCTS
IGW25N120H3 IGBT Transistors IGBT PRODUCTS
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