IGW30N1

IGW30N100TFKSA1 vs IGW30N100T G30T100 vs IGW30N100T

 
PartNumberIGW30N100TFKSA1IGW30N100T G30T100IGW30N100T
DescriptionIGBT Transistors LoLoss IGBT TrnchStp Fieldstop techIGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
ManufacturerInfineon-FEELING
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1000 V--
Collector Emitter Saturation Voltage1.8 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C60 A--
Pd Power Dissipation412 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
SeriesTRENCHSTOP IGBT-IGW30N100
PackagingTube-Tube
Continuous Collector Current Ic Max30 A--
BrandInfineon Technologies--
Gate Emitter Leakage Current600 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIGW30N100T IGW3N1TXK SP000380845--
Unit Weight0.014110 oz--
Part Aliases--IGW30N100TFKSA1 IGW30N100TXK SP000380845
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IGW30N100TFKSA1 IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
IGW30N100T G30T100 New and Original
IGW30N100TS New and Original
IGW30N100T IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
Infineon Technologies
Infineon Technologies
IGW30N100TFKSA1 IGBT 1000V 60A 412W TO247-3
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