IGW30N60H

IGW30N60H3 vs IGW30N60H3 G30H603 vs IGW30N60H3 , 2SC5182

 
PartNumberIGW30N60H3IGW30N60H3 G30H603IGW30N60H3 , 2SC5182
DescriptionIGBT Transistors 600V HI SPEED SW IGBT
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.95 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C60 A--
Pd Power Dissipation187 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesHighSpeed 3--
PackagingTube--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIGW30N60H3FKSA1 IGW3N6H3XK SP000852242--
Unit Weight0.014110 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IGW30N60H3 IGBT Transistors 600V HI SPEED SW IGBT
IGW30N60H3FKSA1 IGBT 600V 60A 187W TO247-3
Infineon Technologies
Infineon Technologies
IGW30N60H3FKSA1 IGBT Transistors IGBT PRODUCTS
IGW30N60H3 G30H603 New and Original
IGW30N60H3 , 2SC5182 New and Original
IGW30N60H3 IGBT Transistors 600V HI SPEED SW IGBT
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