PartNumber | IGW40N120H3 | IGW40N120H3FKSA1 | IGW40N120H3 G40H1203 |
Description | IGBT Transistors IGBT PRODUCTS | IGBT Transistors IGBT PRODUCTS | |
Manufacturer | Infineon | Infineon | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Package / Case | TO-247-3 | TO-247-3 | - |
Mounting Style | Through Hole | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 1200 V | - | - |
Collector Emitter Saturation Voltage | 2.05 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Continuous Collector Current at 25 C | 80 A | - | - |
Pd Power Dissipation | 483 W | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Series | HighSpeed 3 | HighSpeed 3 | - |
Packaging | Tube | Tube | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Gate Emitter Leakage Current | 600 nA | - | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 240 | - | - |
Subcategory | IGBTs | IGBTs | - |
Tradename | TRENCHSTOP | TRENCHSTOP | - |
Part # Aliases | IGW40N120H3FKSA1 IGW4N12H3XK SP000667510 | IGW40N120H3 IGW4N12H3XK SP000667510 | - |
Unit Weight | 1.340411 oz | - | - |