PartNumber | IKB20N60TAATMA1 | IKB20N60TA | IKB20N60TATMA1 |
Description | IGBT Transistors IGBT PRODUCTS | IGBT Transistors IGBT PRODUCTS | IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Mounting Style | SMD/SMT | SMD/SMT | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
Collector Emitter Saturation Voltage | 1.5 V | 1.5 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Continuous Collector Current at 25 C | 40 A | 41 A | - |
Pd Power Dissipation | 156 W | 166 W | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 150 C | + 175 C | - |
Series | TRENCHSTOP | TRENCHSTOP | TRENCHSTOP IGBT |
Packaging | Reel | Reel | Reel |
Continuous Collector Current Ic Max | 40 A | - | - |
Height | 4.57 mm | - | - |
Length | 10.31 mm | - | - |
Width | 9.45 mm | - | - |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Gate Emitter Leakage Current | 100 nA | 100 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | IGBTs | IGBTs | IGBTs |
Tradename | TRENCHSTOP | TRENCHSTOP | TRENCHSTOP |
Part # Aliases | IKB20N60TA IKB2N6TAXT SP000629372 | IKB20N60TAATMA1 IKB2N6TAXT SP000629372 | IKB20N60T IKB2N6TXT SP000054883 |
Unit Weight | - | 0.077603 oz | - |