PartNumber | IKW15N120H3 | IKW15N120H2 | IKW15N120H3 K15H1203 |
Description | IGBT Transistors IGBT PRODUCTS | ||
Manufacturer | Infineon | - | - |
Product Category | IGBT Transistors | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | TO-247-3 | - | - |
Mounting Style | Through Hole | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 1200 V | - | - |
Collector Emitter Saturation Voltage | 2.05 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Continuous Collector Current at 25 C | 30 A | - | - |
Pd Power Dissipation | 217 W | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Series | HighSpeed 3 | - | - |
Packaging | Tube | - | - |
Brand | Infineon Technologies | - | - |
Gate Emitter Leakage Current | 600 nA | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 240 | - | - |
Subcategory | IGBTs | - | - |
Tradename | TRENCHSTOP | - | - |
Part # Aliases | IKW15N120H3FKSA1 IKW15N12H3XK SP000674422 | - | - |
Unit Weight | 1.340411 oz | - | - |