| PartNumber | IKW75N65ES5 | IKW75N65EH5XKSA1 | IKW75N65EL5XKSA1 |
| Description | IGBT Transistors Trenchstop 5 IGBT | IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a | IGBT Transistors 650V IGBT Trenchstop 5 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | 650 V |
| Collector Emitter Saturation Voltage | 1.42 V | 1.65 V | 1.1 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 80 A | 90 A | 80 A |
| Pd Power Dissipation | 395 W | 395 W | 536 W |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Series | TRENCHSTOP 5 S5 | TRENCHSTOP 5 H5 | TRENCHSTOP 5 L5 |
| Packaging | Tube | Tube | Tube |
| Height | 20.7 mm | 20.7 mm | - |
| Length | 15.87 mm | 15.87 mm | - |
| Operating Temperature Range | - 40 C to + 175 C | - | - |
| Width | 5.31 mm | 5.31 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 240 | 240 | 240 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | TRENCHSTOP | TRENCHSTOP | TRENCHSTOP |
| Part # Aliases | IKW75N65ES5XKSA1 SP001319684 | IKW75N65EH5 SP001257948 | IKW75N65EL5 SP001174464 |
| Unit Weight | 0.215171 oz | - | 0.213478 oz |