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| PartNumber | IMH23T110 | IMH23T110 , 2SC5509 |
| Description | Bipolar Transistors - Pre-Biased Dual NPN 20V 600mA | |
| Manufacturer | ROHM Semiconductor | - |
| Product Category | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | - |
| Configuration | Dual | - |
| Transistor Polarity | NPN | - |
| Typical Input Resistor | 4.7 kOhms | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SMT-6 | - |
| DC Collector/Base Gain hfe Min | 820 | - |
| Collector Emitter Voltage VCEO Max | 20 V | - |
| Continuous Collector Current | 600 mA | - |
| Peak DC Collector Current | 600 mA | - |
| Pd Power Dissipation | 300 mW | - |
| Maximum Operating Temperature | + 150 C | - |
| Series | IMH23 | - |
| Packaging | Reel | - |
| DC Current Gain hFE Max | 820 | - |
| Emitter Base Voltage VEBO | 12 V | - |
| Height | 1.1 mm | - |
| Length | 2.9 mm | - |
| Width | 1.6 mm | - |
| Brand | ROHM Semiconductor | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | IMH23 | - |