 |  | | |
| PartNumber | IMW120R045M1XKSA1 | IMW120R030M1HXKSA1 | IMW120R060M1HXKSA1 |
| Description | MOSFET SIC DISCRETE | MOSFET | MOSFET |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | SiC | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 1200 V | - | - |
| Id Continuous Drain Current | 52 A | - | - |
| Rds On Drain Source Resistance | 59 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
| Vgs Gate Source Voltage | - 10 V, 20 V | - | - |
| Qg Gate Charge | 52 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 228 W | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | Tube |
| Series | IMW120R045 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 11.1 S | - | - |
| Fall Time | 13 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 24 ns | - | - |
| Factory Pack Quantity | 240 | 240 | 240 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 17 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Part # Aliases | IMW120R045M1 SP001346254 | IMW120R030M1H SP001727390 | IMW120R060M1H SP001808368 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IMW120R045M1XKSA1 | MOSFET SIC DISCRETE | |
| IMW120R030M1HXKSA1 | MOSFET | ||
| IMW120R090M1HXKSA1 | MOSFET | ||
| IMW120R060M1HXKSA1 | MOSFET | ||
| IMW120R045M1XKSA1 | - Rail/Tube (Alt: IMW120R045M1XKSA1) | ||
| IMW120R080M1 | New and Original | ||
| IMW120R045M1 | Trans MOSFET N-CH 1200V 3-Pin TO-247 (Alt: IMW120R045M1) |