IPA05

IPA057N06N3 G vs IPA052N08NM5SXKSA1 vs IPA050N10NM5SXKSA1

 
PartNumberIPA057N06N3 GIPA052N08NM5SXKSA1IPA050N10NM5SXKSA1
DescriptionMOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3MOSFETMOSFET
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance4.6 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge82 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation38 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingTubeTubeTube
Height16.15 mm--
Length10.65 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width4.85 mm--
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min41 S--
Fall Time9 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time68 ns--
Factory Pack Quantity500500500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time32 ns--
Typical Turn On Delay Time24 ns--
Part # AliasesIPA057N06N3GXKSA1 IPA57N6N3GXK SP000457582IPA052N08NM5S SP001953076IPA050N10NM5S SP001962884
Unit Weight0.211644 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPA057N08N3 G MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3
IPA057N06N3 G MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3
IPA057N06N3GXKSA1 MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3
IPA052N08NM5SXKSA1 MOSFET
IPA050N10NM5SXKSA1 MOSFET
IPA057N06N3GXKSA1 MOSFET N-CH 60V 60A TO220-3-31
IPA057N08N3GXKSA1 MOSFET N-CH 80V 60A TO220-3
IPA057N08N3GXK Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA057N08N3GXKSA1)
IPA057N06N New and Original
IPA057N06N3-G New and Original
IPA057N06N3G Power Field-Effect Transistor, 60A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPA057N08N New and Original
IPA057N08N3 New and Original
IPA057N08N3G Power Field-Effect Transistor, 60A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPA057N08N3G,057N08N New and Original
IPA057N08N3GXKSA1 , 2SD1 New and Original
IPA057N08N3 G Darlington Transistors MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3
IPA057N06N3 G IGBT Transistors MOSFET N-Ch 60V 60A TO220FP-3 OptiMOS 3
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