IPA075N15N3G

IPA075N15N3GXKSA1 vs IPA075N15N3G

 
PartNumberIPA075N15N3GXKSA1IPA075N15N3G
DescriptionMOSFET N-Ch 150V 43A TO220FP-3 OptiMOS 3Power Field-Effect Transistor, 43A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ManufacturerInfineonINFINEON
Product CategoryMOSFETFETs - Single
RoHSY-
TechnologySi-
Mounting StyleThrough Hole-
Package / CaseTO-220FP-3-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage150 V-
Id Continuous Drain Current43 A-
Rds On Drain Source Resistance5.9 mOhms-
Vgs th Gate Source Threshold Voltage2 V-
Vgs Gate Source Voltage20 V-
Qg Gate Charge93 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 175 C-
Pd Power Dissipation39 W-
ConfigurationSingle-
Channel ModeEnhancement-
TradenameOptiMOS-
PackagingTube-
Height16.15 mm-
Length10.65 mm-
SeriesOptiMOS 3-
Transistor Type1 N-Channel-
Width4.85 mm-
BrandInfineon Technologies-
Forward Transconductance Min45 S-
Fall Time15 ns-
Product TypeMOSFET-
Rise Time25 ns-
Factory Pack Quantity500-
SubcategoryMOSFETs-
Typical Turn Off Delay Time50 ns-
Typical Turn On Delay Time22 ns-
Part # AliasesG IPA075N15N3 IPA75N15N3GXK SP000607018-
Unit Weight0.211644 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPA075N15N3GXKSA1 MOSFET N-Ch 150V 43A TO220FP-3 OptiMOS 3
IPA075N15N3GXKSA1 MOSFET N-CH 150V 43A TO220-3
IPA075N15N3G Power Field-Effect Transistor, 43A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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