IPA50R380CEX

IPA50R380CEXKSA2 vs IPA50R380CEXKSA2 , 2SD18 vs IPA50R380CEXKSA1

 
PartNumberIPA50R380CEXKSA2IPA50R380CEXKSA2 , 2SD18IPA50R380CEXKSA1
DescriptionMOSFET CONSUMERDarlington Transistors MOSFET N-Ch 550V 9.9A TO220FP-3
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220FP-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current14.1 A--
Rds On Drain Source Resistance340 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge24.8 nC--
Minimum Operating Temperature- 40 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation29.2 W--
ConfigurationSingle-Single
Channel ModeEnhancement--
TradenameCoolMOS-CoolMOS
PackagingTube-Tube
Height16.15 mm--
Length10.65 mm--
SeriesCoolMOS CE-IPA50R380
Transistor Type1 N-Channel-1 N-Channel
Width4.85 mm--
BrandInfineon Technologies--
Fall Time8.6 ns-8.6 ns
Product TypeMOSFET--
Rise Time5.6 ns-5.6 ns
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time35 ns-35 ns
Typical Turn On Delay Time7.2 ns-7.2 ns
Part # AliasesIPA50R380CE SP001217228--
Unit Weight0.211644 oz-0.211644 oz
Part Aliases--SP000848216
Package Case--TO-220-3
Pd Power Dissipation--29 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--9.9 A
Vds Drain Source Breakdown Voltage--500 V
Vgs th Gate Source Threshold Voltage--3 V
Rds On Drain Source Resistance--500 V
Qg Gate Charge--24.8 nC
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPA50R380CEXKSA2 MOSFET CONSUMER
IPA50R380CEXKSA2 MOSFET CONSUMER
IPA50R380CEXKSA2 , 2SD18 New and Original
IPA50R380CEXKSA1 Darlington Transistors MOSFET N-Ch 550V 9.9A TO220FP-3
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