PartNumber | IPA65R190CFD | IPA65R190C7XKSA1 | IPA65R190C6XKSA1 |
Description | MOSFET N-Ch 650V 17.5A TO220FP CoolMOS CFD2 | MOSFET HIGH POWER BEST IN CLASS | MOSFET HIGH POWER_LEGACY |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220FP-3 | TO-220FP-3 | TO-220FP-3 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
Id Continuous Drain Current | 17.5 A | 8 A | - |
Rds On Drain Source Resistance | 190 mOhms | 168 mOhms | - |
Vgs th Gate Source Threshold Voltage | 4 V | 3 V | - |
Vgs Gate Source Voltage | 30 V | 20 V | - |
Qg Gate Charge | 68 nC | 23 nC | - |
Pd Power Dissipation | 34 W | 30 W | - |
Configuration | Single | Single | - |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Tube | Tube | Tube |
Height | 16.15 mm | 16.15 mm | 16.15 mm |
Length | 10.65 mm | 10.65 mm | 10.65 mm |
Series | CoolMOS CFD2 | CoolMOS C7 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 4.85 mm | 4.85 mm | 4.85 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 6.4 ns | 9 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8.4 ns | 11 ns | - |
Factory Pack Quantity | 500 | 500 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | IPA65R190CFDXKSA1 IPA65R19CFDXK SP000905382 | IPA65R190C7 SP001080140 | IPA65R190C6XKSA1 SP000863892 |
Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Channel Mode | - | Enhancement | - |
Typical Turn Off Delay Time | - | 54 ns | - |
Typical Turn On Delay Time | - | 11 ns | - |