 | | | |
| PartNumber | IPB031N08N5 | IPB031NE7N3 G | IPB031N08N5ATMA1 |
| Description | MOSFET N-Ch 80V 120A D2PAK-2 | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 80V 120A D2PAK-2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 75 V | 80 V |
| Id Continuous Drain Current | 120 A | 100 A | 120 A |
| Rds On Drain Source Resistance | 2.7 mOhms | 2.7 mOhms | 2.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 2.3 V | 2.2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 87 nC | 117 nC | 87 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 167 W | 214 W | 167 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 5 | OptiMOS 3 | OptiMOS 5 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 76 S | 75 S | 76 S |
| Fall Time | 12 ns | 10 ns | 12 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 18 ns | 85 ns | 18 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 37 ns | 40 ns | 37 ns |
| Typical Turn On Delay Time | 18 ns | 16 ns | 18 ns |
| Part # Aliases | IPB031N08N5ATMA1 SP001227048 | IPB031NE7N3GATMA1 IPB31NE7N3GXT SP000641730 | IPB031N08N5 SP001227048 |
| Unit Weight | 0.079014 oz | 0.139332 oz | 0.139332 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB031N08N5 | MOSFET N-Ch 80V 120A D2PAK-2 | |
| IPB031NE7N3 G | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3 | ||
| IPB031N08N5ATMA1 | MOSFET N-Ch 80V 120A D2PAK-2 | ||
| IPB031NE7N3GATMA1 | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3 | ||
| IPB031NE7N3GATMA1 | MOSFET N-CH 75V 100A TO263-3 | ||
| IPB031N08N5ATMA1 | RF Bipolar Transistors MOSFET N-Ch 80V 120A D2PAK-2 | ||
| IPB031N08N5 | MOSFET N-Ch 80V 120A D2PAK-2 | ||
| IPB031NE7N3 | New and Original | ||
| IPB031NE7N3 G | Trans MOSFET N-CH 75V 100A 3-Pin TO-263 T/R - Bulk (Alt: IPB031NE7N3 G) | ||
| IPB031NE7N3G | Power Field-Effect Transistor, 100A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |