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| PartNumber | IPB034N06L3GATMA1 | IPB034N06L3G | IPB034N06L3GATMA1 , 2SD1 |
| Description | MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 | 60V,3.4m��,90A,N-Channel Power MOSFET | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 90 A | - | - |
| Rds On Drain Source Resistance | 2.7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 79 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 150 C | - |
| Pd Power Dissipation | 167 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | XPB034N06 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 77 S | - | - |
| Fall Time | 13 ns | 13 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 78 ns | 78 ns | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 64 ns | 64 ns | - |
| Typical Turn On Delay Time | 25 ns | 25 ns | - |
| Part # Aliases | G IPB034N06L3 IPB34N6L3GXT SP000398062 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Part Aliases | - | G IPB034N06L3 IPB034N06L3GXT SP000398062 | - |
| Package Case | - | TO-263-3 | - |
| Pd Power Dissipation | - | 167 W | - |
| Vgs Gate Source Voltage | - | +/- 20 V | - |
| Id Continuous Drain Current | - | 90 A | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Vgs th Gate Source Threshold Voltage | - | 1.7 V | - |
| Rds On Drain Source Resistance | - | 2.7 mOhms | - |
| Qg Gate Charge | - | 59 nC | - |
| Forward Transconductance Min | - | 153 S | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB034N06L3GATMA1 | MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 | |
| IPB034N06L3GATMA1 | MOSFET N-CH 60V 90A TO263-3 | ||
| IPB034N06L3GATMA1-CUT TAPE | New and Original | ||
| IPB034N06L3GXT | Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N06L3GATMA1) | ||
| IPB034N06L3G | 60V,3.4m��,90A,N-Channel Power MOSFET | ||
| IPB034N06L3GATMA1 , 2SD1 | New and Original |