PartNumber | IPB035N08N3 G | IPB035N08N3 | IPB035N08N3G |
Description | MOSFET N-Ch 80V 100A D2PAK-2 OptiMOS 3 | ||
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 80 V | - | - |
Id Continuous Drain Current | 100 A | - | - |
Rds On Drain Source Resistance | 2.8 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 117 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 214 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | - | - |
Height | 4.4 mm | - | - |
Length | 10 mm | - | - |
Series | OptiMOS 3 | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 9.25 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 75 S | - | - |
Fall Time | 14 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 79 ns | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 45 ns | - | - |
Typical Turn On Delay Time | 23 ns | - | - |
Part # Aliases | IPB035N08N3GATMA1 IPB35N8N3GXT SP000457588 | - | - |
Unit Weight | 0.068654 oz | - | - |