IPB05

IPB054N06N3 G vs IPB050N06NGATMA1 vs IPB052N04NGATMA1

 
PartNumberIPB054N06N3 GIPB050N06NGATMA1IPB052N04NGATMA1
DescriptionMOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3MOSFET N-CH 60V 100A TO-263MOSFET N-CH 40V 70A TO263-3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance4.4 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge82 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation115 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height4.4 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min47 S--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time68 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time32 ns--
Typical Turn On Delay Time24 ns--
Part # AliasesIPB054N06N3GATMA1 IPB54N6N3GXT SP000446782--
Unit Weight0.068654 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB057N06N MOSFET N-Ch 60V 45A D2PAK-2
IPB054N06N3 G MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3
IPB054N06N3GATMA1 MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3
IPB057N06NATMA1 MOSFET N-Ch 60V 45A D2PAK-2
IPB054N08N3GATMA1 MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
IPB054N08N3 G MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
IPB055N03L G MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
IPB054N06N3GATMA1 MOSFET N-CH 60V 80A TO263-3
IPB050N06NGATMA1 MOSFET N-CH 60V 100A TO-263
IPB052N04NGATMA1 MOSFET N-CH 40V 70A TO263-3
IPB054N08N3GATMA1 MOSFET N-CH 80V 80A TO263-3
IPB055N03LGATMA1 MOSFET N-CH 30V 50A TO-263-3
IPB05CN10N G MOSFET N-CH 100V 100A TO263-3
IPB05N03LA MOSFET N-CH 25V 80A D2PAK
IPB05N03LA G MOSFET N-CH 25V 80A D2PAK
IPB057N06NATMA1 Darlington Transistors MOSFET N-Ch 60V 45A D2PAK-2
Infineon Technologies
Infineon Technologies
IPB055N03LGATMA1 MOSFET LV POWER MOS
IPB05CN10N G MOSFET N-Ch 100V 100A D2PAK-2
IPB054N06N3GATMA1-CUT TAPE New and Original
IPB054N08N3GATMA1-CUT TAPE New and Original
IPB054N08N3GXT Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB054N08N3GATMA1)
IPB050N06N G MOSFET N-Ch 60V 100A D2PAK-2
IPB050N06NG New and Original
IPB051NE8NG Power Field-Effect Transistor, 100A I(D), 85V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB051NE8NG(051NE8N) New and Original
IPB051NE8NGATMA1 - Bulk (Alt: IPB051NE8NGATMA1)
IPB052N04N New and Original
IPB052N04NG Power Field-Effect Transistor, 70A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB054N06N3-G New and Original
IPB054N06N3G Trans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R (Alt: IPB054N06N3 G)
IPB054N06N3GATMA1 , 2SD1 New and Original
IPB054N08N3 New and Original
IPB054N08N3G MOSFET, N-CH, 80V, 80A, TO-263-3
IPB054N08N3G,054N08N New and Original
IPB054N08N3GS New and Original
IPB055N03LG New and Original
IPB057N06N Trans MOSFET N-CH 60V 45A
IPB057N06N3 G New and Original
IPB057N07N New and Original
IPB05CN10NG New and Original
IPB05N03 New and Original
IPB05N03AL New and Original
IPB05N03L New and Original
IPB05N03L E3045 New and Original
IPB05N03L E3045A New and Original
IPB05N03LA IPB05N03L New and Original
IPB05N03LAG MOSFET N-Ch 25V 80A D2PAK-2
IPB054N06N3 G IGBT Transistors MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3
IPB052N04N G IGBT Transistors MOSFET N-Ch 40V 70A D2PAK-2
IPB054N08N3 G IGBT Transistors MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
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