PartNumber | IPB100N08S2L07ATMA1 | IPB100N08S2L-07 | IPB100N08S2L-07(PN08L07) |
Description | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS | |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 75 V | 75 V | - |
Id Continuous Drain Current | 100 A | 100 A | - |
Rds On Drain Source Resistance | 4.7 mOhms | 6.5 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 246 nC | 246 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 300 W | 300 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 4.4 mm | 4.4 mm | - |
Length | 10 mm | 10 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 9.25 mm | 9.25 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 22 ns | 22 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 56 ns | 56 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 85 ns | 85 ns | - |
Typical Turn On Delay Time | 19 ns | 19 ns | - |
Part # Aliases | IPB100N08S2L-07 IPB1N8S2L7XT SP000219053 | IPB100N08S2L07ATMA1 IPB1N8S2L7XT SP000219053 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |