PartNumber | IPB100N12S305ATMA1 | IPB100N10S3-05 | IPB100N10S305ATMA1 |
Description | MOSFET N-CHANNEL 100+ | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-T | MOSFET N-CHANNEL_100+ |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Packaging | Reel | Reel | Reel |
Height | 4.4 mm | 4.4 mm | 4.4 mm |
Length | 10 mm | 10 mm | 10 mm |
Width | 9.25 mm | 9.25 mm | 9.25 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Moisture Sensitive | Yes | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | IPB100N12S3-05 SP001399682 | IPB100N10S305ATMA1 IPB1N1S35XT SP000261243 | IPB100N10S3-05 IPB1N1S35XT SP000261243 |
Unit Weight | 0.077603 oz | 0.139332 oz | 0.139332 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 100 V | - |
Id Continuous Drain Current | - | 100 A | - |
Rds On Drain Source Resistance | - | 4.8 mOhms | - |
Vgs Gate Source Voltage | - | 20 V | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 300 W | - |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | - |
Tradename | - | OptiMOS | - |
Series | - | OptiMOS-T | - |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Fall Time | - | 20 ns | - |
Rise Time | - | 17 ns | - |
Typical Turn Off Delay Time | - | 60 ns | - |
Typical Turn On Delay Time | - | 34 ns | - |