IPB100N1

IPB100N12S305ATMA1 vs IPB100N10S3-05 vs IPB100N10S305ATMA1

 
PartNumberIPB100N12S305ATMA1IPB100N10S3-05IPB100N10S305ATMA1
DescriptionMOSFET N-CHANNEL 100+MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-TMOSFET N-CHANNEL_100+
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
QualificationAEC-Q101AEC-Q101AEC-Q101
PackagingReelReelReel
Height4.4 mm4.4 mm4.4 mm
Length10 mm10 mm10 mm
Width9.25 mm9.25 mm9.25 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Moisture SensitiveYes--
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesIPB100N12S3-05 SP001399682IPB100N10S305ATMA1 IPB1N1S35XT SP000261243IPB100N10S3-05 IPB1N1S35XT SP000261243
Unit Weight0.077603 oz0.139332 oz0.139332 oz
Number of Channels-1 Channel1 Channel
Transistor Polarity-N-ChannelN-Channel
Vds Drain Source Breakdown Voltage-100 V-
Id Continuous Drain Current-100 A-
Rds On Drain Source Resistance-4.8 mOhms-
Vgs Gate Source Voltage-20 V-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Pd Power Dissipation-300 W-
Configuration-SingleSingle
Channel Mode-Enhancement-
Tradename-OptiMOS-
Series-OptiMOS-T-
Transistor Type-1 N-Channel1 N-Channel
Fall Time-20 ns-
Rise Time-17 ns-
Typical Turn Off Delay Time-60 ns-
Typical Turn On Delay Time-34 ns-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB100N12S305ATMA1 MOSFET N-CHANNEL 100+
IPB100N10S3-05 MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-T
IPB100N12S305ATMA1 MOSFET N-CH 120V 100A TO263-3
IPB100N10S305ATMA1 MOSFET N-CH 100V 100A TO263-3
Infineon Technologies
Infineon Technologies
IPB100N10S305ATMA1 MOSFET N-CHANNEL_100+
IPB100N10S3-05 MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-T
IPB100N10S3-05(1) New and Original
IPB100N10S3-05. New and Original
IPB100N12S3-05 New and Original
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