PartNumber | IPB108N15N3GATMA1 | IPB108N15N3G 108N15N | IPB108N15N3G |
Description | MOSFET MV POWER MOS | Power Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
Manufacturer | Infineon | - | INFINEON |
Product Category | MOSFET | - | IC Chips |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Configuration | Single | - | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | - | - |
Height | 4.4 mm | - | - |
Length | 10 mm | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 9.25 mm | - | - |
Brand | Infineon Technologies | - | - |
Product Type | MOSFET | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | G IPB108N15N3 IPB18N15N3GXT SP000677862 | - | - |
Unit Weight | 0.139332 oz | - | - |