IPB320N20N3

IPB320N20N3GATMA1 vs IPB320N20N3 G

 
PartNumberIPB320N20N3GATMA1IPB320N20N3 G
DescriptionMOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage200 V200 V
Id Continuous Drain Current34 A34 A
Rds On Drain Source Resistance28 mOhms28 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge29 nC29 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation136 W136 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingReelReel
Height4.4 mm4.4 mm
Length10 mm10 mm
SeriesOptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel
Width9.25 mm9.25 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min27 S27 S
Fall Time4 ns4 ns
Product TypeMOSFETMOSFET
Rise Time9 ns9 ns
Factory Pack Quantity10001000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time21 ns21 ns
Typical Turn On Delay Time11 ns11 ns
Part # AliasesG IPB320N20N3 IPB32N2N3GXT SP000691172IPB320N20N3GATMA1 IPB32N2N3GXT SP000691172
Unit Weight0.139332 oz0.139332 oz
Type-OptiMOS 3 Power-Transistor
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB320N20N3GATMA1 MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
IPB320N20N3 G MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
IPB320N20N3 G MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
IPB320N20N3GATMA1 MOSFET N-CH 200V 34A TO263-3
IPB320N20N3GATMA1-CUT TAPE New and Original
IPB320N20N3G Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-263
IPB320N20N3G 320N20N New and Original
IPB320N20N3GS New and Original
IPB320N20N3 New and Original
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