IPB45N06S4L

IPB45N06S4L08ATMA1 vs IPB45N06S4L-08 vs IPB45N06S4L08ATMA2

 
PartNumberIPB45N06S4L08ATMA1IPB45N06S4L-08IPB45N06S4L08ATMA2
DescriptionMOSFET N-CHANNEL_55/60VTransistor MOSFET N-CH 60V 45A 3-Pin TO-263 T/R (Alt: IPB45N06S4L-08)Trans MOSFET N-CH 60V 45A 3-Pin TO-263 T/R - Bulk (Alt: IPB45N06S4L08ATMA2)
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
ConfigurationSingle--
PackagingReelReel-
Height4.4 mm--
Length10 mm--
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
SubcategoryMOSFETs--
Part # AliasesIPB45N06S4L-08 IPB45N06S4L08XT SP000374316--
Unit Weight0.139332 oz0.139332 oz-
Series-OptiMOS-T2-
Part Aliases-IPB45N06S4L08ATMA1 IPB45N06S4L08ATMA2 IPB45N06S4L08XT SP001028654-
Tradename-OptiMOS-
Package Case-TO-252-3-
Pd Power Dissipation-71 W-
Maximum Operating Temperature-+ 175 C-
Minimum Operating Temperature-- 55 C-
Fall Time-8 ns-
Rise Time-2 ns-
Vgs Gate Source Voltage-16 V-
Id Continuous Drain Current-45 A-
Vds Drain Source Breakdown Voltage-60 V-
Rds On Drain Source Resistance-7.9 mOhms-
Typical Turn Off Delay Time-45 ns-
Typical Turn On Delay Time-9 ns-
Qg Gate Charge-49 nC-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB45N06S4L08ATMA3 MOSFET
IPB45N06S4L08ATMA1 MOSFET N-CH 60V 45A TO263-3
Infineon Technologies
Infineon Technologies
IPB45N06S4L08ATMA1 MOSFET N-CHANNEL_55/60V
IPB45N06S4L08ATMA3 MOSFET_)40V,60V) - Tape and Reel (Alt: IPB45N06S4L08ATMA3)
IPB45N06S4L-08 Transistor MOSFET N-CH 60V 45A 3-Pin TO-263 T/R (Alt: IPB45N06S4L-08)
IPB45N06S4L08ATMA2 Trans MOSFET N-CH 60V 45A 3-Pin TO-263 T/R - Bulk (Alt: IPB45N06S4L08ATMA2)
Top