PartNumber | IPB45N06S4L08ATMA1 | IPB45N06S4L-08 | IPB45N06S4L08ATMA2 |
Description | MOSFET N-CHANNEL_55/60V | Transistor MOSFET N-CH 60V 45A 3-Pin TO-263 T/R (Alt: IPB45N06S4L-08) | Trans MOSFET N-CH 60V 45A 3-Pin TO-263 T/R - Bulk (Alt: IPB45N06S4L08ATMA2) |
Manufacturer | Infineon | Infineon Technologies | - |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Configuration | Single | - | - |
Packaging | Reel | Reel | - |
Height | 4.4 mm | - | - |
Length | 10 mm | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 9.25 mm | - | - |
Brand | Infineon Technologies | - | - |
Product Type | MOSFET | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | IPB45N06S4L-08 IPB45N06S4L08XT SP000374316 | - | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Series | - | OptiMOS-T2 | - |
Part Aliases | - | IPB45N06S4L08ATMA1 IPB45N06S4L08ATMA2 IPB45N06S4L08XT SP001028654 | - |
Tradename | - | OptiMOS | - |
Package Case | - | TO-252-3 | - |
Pd Power Dissipation | - | 71 W | - |
Maximum Operating Temperature | - | + 175 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 8 ns | - |
Rise Time | - | 2 ns | - |
Vgs Gate Source Voltage | - | 16 V | - |
Id Continuous Drain Current | - | 45 A | - |
Vds Drain Source Breakdown Voltage | - | 60 V | - |
Rds On Drain Source Resistance | - | 7.9 mOhms | - |
Typical Turn Off Delay Time | - | 45 ns | - |
Typical Turn On Delay Time | - | 9 ns | - |
Qg Gate Charge | - | 49 nC | - |