 |  | | |
| PartNumber | IPB50R250CPATMA1 | IPB50R250CP | IPB50R250CP 5R250P |
| Description | MOSFET LOW POWER_LEGACY | - Bulk (Alt: IPB50R250CP) | |
| Manufacturer | Infineon | INFINEON | - |
| Product Category | MOSFET | FETs - Single | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Configuration | Single | Single | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | IPB50R250CPATMA1 SP000236093 | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Series | - | CoolMOS CP | - |
| Part Aliases | - | IPB50R250CPATMA1 IPB50R250CPXT SP000236093 | - |
| Package Case | - | TO-252-3 | - |
| Pd Power Dissipation | - | 114 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 11 ns | - |
| Rise Time | - | 14 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 13 A | - |
| Vds Drain Source Breakdown Voltage | - | 550 V | - |
| Rds On Drain Source Resistance | - | 250 mOhms | - |
| Typical Turn Off Delay Time | - | 80 ns | - |
| Typical Turn On Delay Time | - | 35 ns | - |
| Channel Mode | - | Enhancement | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB50R250CPATMA1 | MOSFET LOW POWER_LEGACY | |
| IPB50R250CP | - Bulk (Alt: IPB50R250CP) | ||
| IPB50R250CP 5R250P | New and Original | ||
Infineon Technologies |
IPB50R250CPATMA1 | MOSFET N-CH 550V 13A TO-263 |