 | | | |
| PartNumber | IPB60R160P6ATMA1 | IPB60R160C6ATMA1 | IPB60R160C6 |
| Description | MOSFET HIGH POWER_PRICE/PERFORM | MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6 | MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | CoolMOS P6 | CoolMOS C6 | CoolMOS C6 |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | IPB60R160P6 SP001313876 | IPB60R160C6 IPB6R16C6XT SP000687552 | IPB60R160C6ATMA1 IPB6R16C6XT SP000687552 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Id Continuous Drain Current | - | 23.8 A | 23.8 A |
| Rds On Drain Source Resistance | - | 140 mOhms | 140 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | 2.5 V |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Qg Gate Charge | - | 75 nC | 75 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 176 W | 176 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Fall Time | - | 8 ns | 8 ns |
| Rise Time | - | 13 ns | 13 ns |
| Typical Turn Off Delay Time | - | 96 ns | 96 ns |
| Typical Turn On Delay Time | - | 13 ns | 13 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB60R160P6ATMA1 | MOSFET HIGH POWER_PRICE/PERFORM | |
| IPB60R160C6ATMA1 | MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6 | ||
| IPB60R160C6 | MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6 | ||
| IPB60R165CP | MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP | ||
| IPB60R165CPATMA1 | MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP | ||
| IPB60R165CPATMA1 | MOSFET N-CH 600V 21A D2PAK | ||
| IPB60R160C6ATMA1 | MOSFET N-CH 600V 23.8A TO263 | ||
| IPB60R160P6ATMA1 | MOSFET N-CH TO263-3 | ||
| IPB60R160C6 | Trans MOSFET N-CH 650V 23.8A 3-Pin TO-263 T/R (Alt: IPB60R160C6) | ||
| IPB60R165CP 6R165P | New and Original | ||
| IPB60R165CPXT | New and Original | ||
| IPB60R165CP | IGBT Transistors MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP |