 |  | | |
| PartNumber | IPB65R280C6ATMA1 | IPB65R225C7ATMA2 | IPB65R225C7ATMA1 |
| Description | MOSFET N-Ch 700V 13.8A D2PAK-2 CoolMOS C6 | MOSFET N-CH 650V 11A TO-263-3 | MOSFET N-Ch 700V 41A D2PAK-2 |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 13.8 A | - | - |
| Rds On Drain Source Resistance | 250 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 45 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 104 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Reel | - | Reel |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | CoolMOS C6 | - | XPB65R225 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 12 ns | - | 10 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | - | 6 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 105 ns | - | 48 ns |
| Typical Turn On Delay Time | 13 ns | - | 9 ns |
| Part # Aliases | IPB65R280C6ATMA1 SP000745030 | - | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Part Aliases | - | - | IPB65R225C7 SP000992480 |
| Package Case | - | - | TO-263-3 |
| Pd Power Dissipation | - | - | 63 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 41 A |
| Vds Drain Source Breakdown Voltage | - | - | 700 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3.5 V |
| Rds On Drain Source Resistance | - | - | 225 mOhms |
| Qg Gate Charge | - | - | 20 nC |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB65R280E6 | MOSFET N-Ch 700V 13.8A D2PAK-2 CoolMOS E6 | |
| IPB65R280E6ATMA1 | MOSFET N-Ch 700V 13.8A D2PAK-2 | ||
| IPB65R225C7ATMA2 | MOSFET N-CH 650V 11A TO-263-3 | ||
| IPB65R280C6ATMA1 | MOSFET N-CH 650V 13.8A TO263 | ||
| IPB65R225C7ATMA1 | MOSFET N-Ch 700V 41A D2PAK-2 | ||
| IPB65R280E6ATMA1 | MOSFET N-Ch 700V 13.8A D2PAK-2 | ||
Infineon Technologies |
IPB65R280C6ATMA1 | MOSFET N-Ch 700V 13.8A D2PAK-2 CoolMOS C6 | |
| IPB65R225C7ATMA1-CUT TAPE | New and Original | ||
| IPB65R225C7 | MOSFET N-Ch 700V 41A D2PAK-2 | ||
| IPB65R280C6 | MOSFET N-Ch 700V 13.8A D2PAK-2 CoolMOS C6 | ||
| IPB65R280E6 | - Bulk (Alt: IPB65R280E6) |