PartNumber | IPB65R600C6ATMA1 | IPB65R600C6 65C6600 | IPB65R600C6 |
Description | MOSFET N-CH 650V 7.3A TO263 | Darlington Transistors MOSFET N-Ch 700V 7.3A D2PAK-2 CoolMOS C6 | |
Manufacturer | - | - | Infineon Technologies |
Product Category | - | - | Transistors - FETs, MOSFETs - Single |
Series | - | - | CoolMOS C6 |
Packaging | - | - | Reel |
Part Aliases | - | - | IPB65R600C6ATMA1 IPB65R600C6XT SP000794382 |
Unit Weight | - | - | 0.139332 oz |
Mounting Style | - | - | SMD/SMT |
Tradename | - | - | CoolMOS |
Package Case | - | - | TO-252-3 |
Technology | - | - | Si |
Number of Channels | - | - | 1 Channel |
Configuration | - | - | Single |
Transistor Type | - | - | 1 N-Channel |
Pd Power Dissipation | - | - | 63 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 13 ns |
Rise Time | - | - | 9 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 7.3 A |
Vds Drain Source Breakdown Voltage | - | - | 700 V |
Rds On Drain Source Resistance | - | - | 600 mOhms |
Transistor Polarity | - | - | N-Channel |
Typical Turn Off Delay Time | - | - | 80 nS |
Qg Gate Charge | - | - | 23 nC |