 | |  | |
| PartNumber | IPB70N04S4-06 | IPB70N04S406ATMA1 | IPB70N04S406 |
| Description | MOSFET N-Ch 40V 70A D2PAK-2 OptiMOS-T2 | MOSFET N-Ch 40V 70A D2PAK-2 OptiMOS-T2 | Power Field-Effect Transistor, 70A I(D), 40V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 70 A | 70 A | - |
| Rds On Drain Source Resistance | 5.3 mOhms | 5.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 32 nC | 32 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 58 W | 58 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS-T2 | XPB70N04 | XPB70N04 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 9 ns | 9 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 ns | 10 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 7 ns | 7 ns | - |
| Typical Turn On Delay Time | 8 ns | 8 ns | - |
| Part # Aliases | IPB70N04S406ATMA1 IPB7N4S46XT SP000711476 | IPB70N04S4-06 IPB7N4S46XT SP000711476 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Part Aliases | - | - | IPB70N04S4-06 IPB70N04S406XT SP000711476 |
| Package Case | - | - | TO-263-3 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB70N04S4-06 | MOSFET N-Ch 40V 70A D2PAK-2 OptiMOS-T2 | |
| IPB70N04S406ATMA1 | MOSFET N-Ch 40V 70A D2PAK-2 OptiMOS-T2 | ||
| IPB70N04S406ATMA1 | MOSFET N-CH 40V 70A TO263-3-2 | ||
| IPB70N04S4-06 | MOSFET N-Ch 40V 70A D2PAK-2 OptiMOS-T2 | ||
| IPB70N04S406 | Power Field-Effect Transistor, 70A I(D), 40V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |