PartNumber | IPB80P04P4-05 | IPB80P03P4L04ATMA1 | IPB80P03P4L07ATMA1 |
Description | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | MOSFET P-CHANNEL | MOSFET P-CH 30V 80A TO263-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 40 V | - | - |
Id Continuous Drain Current | 80 A | - | - |
Rds On Drain Source Resistance | 3.7 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 151 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 125 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | Reel | - |
Height | 4.4 mm | 4.4 mm | - |
Length | 10 mm | 10 mm | - |
Series | OptiMOS-P2 | - | - |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Width | 9.25 mm | 9.25 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 65 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 24 ns | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 73 ns | - | - |
Typical Turn On Delay Time | 42 ns | - | - |
Part # Aliases | IPB80P04P405ATMA1 IPB8P4P45XT SP000652618 | IPB80P03P4L-04 IPB8P3P4L4XT SP000396284 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |