PartNumber | IPD050N03LGATMA1 | IPD050N03L G | IPD04N03LB G |
Description | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | MOSFET N-Ch 30V 50A DPAK-2 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
Id Continuous Drain Current | 50 A | 50 A | 50 A |
Rds On Drain Source Resistance | 4.2 mOhms | 4.2 mOhms | 5.8 Ohms |
Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 31 nC | 31 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 68 W | 68 W | 115 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm | 6.5 mm |
Series | OptiMOS 3 | OptiMOS 3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 38 S | 38 S | 102 S / 51 S |
Fall Time | 3.8 ns | 3.8 ns | 6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 13 ns | 13 ns | 10 ns |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 25 ns | 25 ns | 43 ns |
Typical Turn On Delay Time | 6.7 ns | 6.7 ns | 14 ns |
Part # Aliases | G IPD050N03L IPD5N3LGXT SP000680630 | IPD050N03LGATMA1 IPD5N3LGXT SP000680630 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Moisture Sensitive | - | - | Yes |