IPD036

IPD036N04L G vs IPD036 vs IPD036N04L

 
PartNumberIPD036N04L GIPD036IPD036N04L
DescriptionMOSFET N-Ch 40V 90A DPAK-2 OptiMOS 3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePG-TO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance3.6 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge59 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation94 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min85 S--
Fall Time6 ns--
Product TypeMOSFET--
Rise Time5.4 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time37 ns--
Typical Turn On Delay Time9.3 ns--
Part # AliasesIPD036N04LGBTMA1 IPD36N4LGXT SP000387945--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD036N04L G MOSFET N-Ch 40V 90A DPAK-2 OptiMOS 3
IPD036N04LGBTMA1 MOSFET N-Ch 40V 90A DPAK-2 OptiMOS 3
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IPD036N04LGBTMA1-CUT TAPE New and Original
IPD036 New and Original
IPD036N04L New and Original
IPD036N04L G Trans MOSFET N-CH 40V 90A 3-Pin TO-252 T/R (Alt: IPD036N04L G)
IPD036N04LG 40V,90A,N Channel Power MOSFET
IPD036N04LG , 2SD1963-S New and Original
IPD036N04LG 036N04L New and Original
IPD036N04LG(036N04L) New and Original
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