 | |  | |
| PartNumber | IPD038N06N3 G | IPD038N06N3GATMA1 | IPD038N06N3G |
| Description | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3 | MOSFET MV POWER MOS | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 90 A | - | - |
| Rds On Drain Source Resistance | 3.8 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 188 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 70 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns | - | - |
| Typical Turn On Delay Time | 30 ns | - | - |
| Part # Aliases | IPD038N06N3GATMA1 IPD38N6N3GXT SP000397994 | G IPD038N06N3 IPD38N6N3GXT SP000397994 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD038N06N3 G | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3 | |
| IPD038N06N3GATMA1 | MOSFET N-CH 60V 90A TO252-3 | ||
Infineon Technologies |
IPD038N06N3GATMA1 | MOSFET MV POWER MOS | |
| IPD038N06N3 G | Trans MOSFET N-CH 60V 90A 3-Pin TO-252 T/R (Alt: IPD038N06N3 G) | ||
| IPD038N06N3G | New and Original |