IPD03N03LB

IPD03N03LB G vs IPD03N03LB vs IPD03N03LBG

 
PartNumberIPD03N03LB GIPD03N03LBIPD03N03LBG
DescriptionMOSFET N-Ch 30V 90A DPAK-2
ManufacturerInfineonINF-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance4.9 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation115 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min120 S / 60 S--
Fall Time6.2 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time41 ns--
Typical Turn On Delay Time13 ns--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD03N03LB G MOSFET N-Ch 30V 90A DPAK-2
Infineon Technologies
Infineon Technologies
IPD03N03LB G MOSFET N-CH 30V 90A TO-252
IPD03N03LB New and Original
IPD03N03LBG New and Original
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