 | |  | |
| PartNumber | IPD040N03L G | IPD040N03LGBTMA1 | IPD040N03LGATMA1 |
| Description | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3 | MOSFET N-Ch 30V 90A DPAK-2 | MOSFET N-CH 30V 90A TO252-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 90 A | 90 A | - |
| Rds On Drain Source Resistance | 4 mOhms | 4 mOhms | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 79 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPD040N03LGATMA1 IPD4N3LGXT SP000680628 | G IPD040N03L IPD4N3LGXT SP000254715 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD048N06L3 G | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3 | |
| IPD042P03L3GATMA1 | MOSFET SMALL SIGNAL+P-CH | ||
| IPD040N03L G | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3 | ||
| IPD042P03L3GBTMA1 | MOSFET P-Ch -30V 70A DPAK-2 OptiMOS P3 | ||
| IPD042P03L3 G | MOSFET P-Ch -30V 70A DPAK-2 OptiMOS P3 | ||
| IPD040N03LGBTMA1 | MOSFET N-Ch 30V 90A DPAK-2 | ||
| IPD042P03L3GATMA1 | MOSFET P-CH 30V 70A TO252-3 | ||
| IPD042P03L3GBTMA1 | MOSFET P-CH 30V 70A TO252-3 | ||
| IPD046N08N5ATMA1 | MOSFET N-CH 80V 90A TO252-3 | ||
| IPD048N06L3GBTMA1 | MOSFET N-CH 60V 90A TO252-3 | ||
| IPD040N03LGATMA1 | MOSFET N-CH 30V 90A TO252-3 | ||
| IPD04N03LA G | MOSFET N-CH 25V 50A DPAK | ||
| IPD04N03LB G | MOSFET N-CH 30V 50A TO-252 | ||
| IPD040N03LGBTMA1 | MOSFET N-Ch 30V 90A DPAK-2 | ||
Infineon Technologies |
IPD04N03LB G | MOSFET N-Ch 30V 50A DPAK-2 | |
| IPD046N08N5ATMA1 | MOSFET DIFFERENTIATED MOSFETS | ||
| IPD042P03L3G | Trans MOSFET P-CH 30V 70A 3-Pin TO-252 T/R (Alt: IPD042P03L3 G) | ||
| IPD042P03L3GATMA1-CUT TAPE | New and Original | ||
| IPD042P03L3GXT | Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD042P03L3GBTMA1) | ||
| IPD040N03 | New and Original | ||
| IPD040N03L | New and Original | ||
| IPD040N03L G | Trans MOSFET N-CH 30V 90A 3-Pin TO-252 T/R (Alt: SP000680628) | ||
| IPD040N03L G(SP000680628 | New and Original | ||
| IPD040N03LG | Power Field-Effect Transistor, 89A I(D), 30V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| IPD040N03LG 040N03L | New and Original | ||
| IPD040N03LG , 2SD1974 | New and Original | ||
| IPD040N03LG(04N03L) | New and Original | ||
| IPD040N03LGS | New and Original | ||
| IPD042P03L3G 042P03L | New and Original | ||
| IPD042P03L3G(042P03L) | New and Original | ||
| IPD042P03L3GATMA1 , 2SD1 | New and Original | ||
| IPD042P03L3GBTMA1 , 2SD1 | New and Original | ||
| IPD042P03L3GS | New and Original | ||
| IPD048N06L3 G | Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R | ||
| IPD048N06L3G | 60V,4.8m��,90A,N-Channel Power MOSFET | ||
| IPD04N03L | New and Original | ||
| IPD04N03LA | New and Original | ||
| IPD04N03LA 04N03LA | New and Original | ||
| IPD04N03LAG | New and Original | ||
| IPD04N03LBG | Power Field-Effect Transistor, 50A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| IPD042P03L3 G | IGBT Transistors MOSFET P-Ch -30V 70A DPAK-2 OptiMOS P3 |