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| PartNumber | IPD050N03LGATMA1 | IPD050N03LG | IPD050N03LGBTMA1 |
| Description | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | MOSFET N-CH 30V 50A TO252-3 | |
| Manufacturer | Infineon | infineon | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 4.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 31 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 68 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 38 S | - | - |
| Fall Time | 3.8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 13 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 6.7 ns | - | - |
| Part # Aliases | G IPD050N03L IPD5N3LGXT SP000680630 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD050N03LGATMA1 | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | |
| IPD050N03LGATMA1 | MOSFET N-CH 30V 50A TO252-3 | ||
| IPD050N03LGBTMA1 | MOSFET N-CH 30V 50A TO252-3 | ||
| IPD050N03LG | New and Original |