IPD053N08N3

IPD053N08N3GATMA1 vs IPD053N08N3GBTMA1

 
PartNumberIPD053N08N3GATMA1IPD053N08N3GBTMA1
DescriptionMOSFET MV POWER MOSMOSFET N-Ch 80V 90A DPAK-2 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage80 V80 V
Id Continuous Drain Current90 A90 A
Rds On Drain Source Resistance5.3 mOhms4.4 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V
Vgs Gate Source Voltage10 V20 V
Qg Gate Charge52 nC69 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation150 W150 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingReelReel
Height2.3 mm2.3 mm
Length6.5 mm6.5 mm
SeriesOptiMOS 3XPD053N08
Transistor Type1 N-Channel1 N-Channel
Width6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min56 S56 S
Fall Time10 ns10 ns
Product TypeMOSFETMOSFET
Rise Time66 ns66 ns
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time38 ns38 ns
Typical Turn On Delay Time18 ns18 ns
Part # AliasesG IPD053N08N3 SP001127818G IPD053N08N3 IPD053N08N3GXT SP000395183
Unit Weight0.139332 oz0.139332 oz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD053N08N3GATMA1 MOSFET MV POWER MOS
IPD053N08N3GBTMA1 MOSFET N-CH 80V 90A TO252-3
IPD053N08N3GATMA1 MOSFET N-CH 80V 90A TO252-3
Infineon Technologies
Infineon Technologies
IPD053N08N3GBTMA1 MOSFET N-Ch 80V 90A DPAK-2 OptiMOS 3
IPD053N08N3 G Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) TO-252
IPD053N08N3G New and Original
IPD053N08N3GXT New and Original
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