IPD075N03LG

IPD075N03LGATMA1 vs IPD075N03LG vs IPD075N03LG,075N03LG

 
PartNumberIPD075N03LGATMA1IPD075N03LGIPD075N03LG,075N03LG
DescriptionMOSFET N-Ch 30V 50A DPAK-2
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance6.3 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation47 W--
ConfigurationSingle--
TradenameOptiMOS--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min61 S--
Fall Time2.8 ns--
Product TypeMOSFET--
Rise Time3.6 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Part # AliasesG IPD075N03L IPD75N3LGXT SP000680634--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD075N03LGATMA1 MOSFET N-Ch 30V 50A DPAK-2
IPD075N03LGBTMA1 MOSFET N-CH 30V 50A TO252-3
IPD075N03LGATMA1 MOSFET N-CH 30V 50A TO252-3
IPD075N03LG New and Original
IPD075N03LG,075N03LG New and Original
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