IPD096

IPD096N08N3GATMA1 vs IPD096N08N3 G vs IPD096N08N3G

 
PartNumberIPD096N08N3GATMA1IPD096N08N3 GIPD096N08N3G
DescriptionMOSFETMOSFET N-Ch 80V 73A DPAK-2 OptiMOS 3Trans MOSFET N-CH 80V 73A 3-Pin TO-252 T/R - Bulk (Alt: IPD096N08N3G)
ManufacturerInfineon-INF
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current73 A--
Rds On Drain Source Resistance7.9 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge35 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation100 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min30 S--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time30 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesG IPD096N08N3 SP001127826--
Unit Weight0.011993 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD096N08N3GATMA1 MOSFET
IPD096N08N3GATMA1 MOSFET N-CH 80V 73A
IPD096N08N3GBTMA1 MOSFET N-CH 80V 73A TO252-3
IPD096N08N3 G MOSFET N-Ch 80V 73A DPAK-2 OptiMOS 3
IPD096N08N3G Trans MOSFET N-CH 80V 73A 3-Pin TO-252 T/R - Bulk (Alt: IPD096N08N3G)
IPD096N08N3GBTMA1 , 2SD2 New and Original
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