 |  | | |
| PartNumber | IPD09N03LA G | IPD09N03LA | IPD09N03LA(50A 25V) |
| Description | MOSFET N-Ch 25V 50A DPAK-2 | MOSFET Transistor, N-Channel, TO-252AA | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 14.8 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 63 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 46 S / 23 S | - | - |
| Fall Time | 3.4 ns | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.6 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD09N03LA G | MOSFET N-Ch 25V 50A DPAK-2 | |
| IPD09N03LA | MOSFET Transistor, N-Channel, TO-252AA | ||
| IPD09N03LA(50A 25V) | New and Original | ||
| IPD09N03LA-G | New and Original | ||
| IPD09N03LAG | 50A, 25V, 0.0148ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | ||
| IPD09N03LAG-09N03LA | New and Original | ||
Infineon Technologies |
IPD09N03LA G | MOSFET N-CH 25V 50A DPAK |