IPD10N03

IPD10N03 vs IPD10N03L vs IPD10N03LA

 
PartNumberIPD10N03IPD10N03LIPD10N03LA
DescriptionMOSFET N-CH 25V 30A DPAK
Manufacturer-INFINEON-
Product Category-FETs - Single-
Series-OptiMOS-
Packaging-Tape & Reel (TR)-
Part Status-Obsolete-
FET Type-N-Channel-
Technology-MOSFET (Metal Oxide)-
Drain to Source Voltage (Vdss)-25V-
Current Continuous Drain (Id) @ 25°C-30A (Tc)-
Drive Voltage (Max Rds On, Min Rds On)-4.5V, 10V-
Vgs(th) (Max) @ Id-2V @ 20A-
Gate Charge (Qg) (Max) @ Vgs-11nC @ 5V-
Vgs (Max)-±20V-
Input Capacitance (Ciss) (Max) @ Vds-1358pF @ 15V-
FET Feature---
Power Dissipation (Max)-52W (Tc)-
Rds On (Max) @ Id, Vgs-10.4 mOhm @ 30A, 10V-
Operating Temperature--55°C ~ 175°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-PG-TO252-3-
Package / Case-TO-252-3, DPak (2 Leads + Tab), SC-63-
Manufacturer Part # Description RFQ
IPD10N03 New and Original
IPD10N03LAG MOSFET N-Ch 25V 30A DPAK-2
IPD10N03L New and Original
Infineon Technologies
Infineon Technologies
IPD10N03LA MOSFET N-CH 25V 30A DPAK
IPD10N03LA G MOSFET N-CH 25V 30A DPAK
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