IPD135N03L

IPD135N03LGATMA1 vs IPD135N03L G vs IPD135N03LGBTMA1

 
PartNumberIPD135N03LGATMA1IPD135N03L GIPD135N03LGBTMA1
DescriptionMOSFET N-Ch 30V 30A DPAK-2MOSFET N-Ch 30V 30A DPAK-2 OptiMOS 3MOSFET LV POWER MOS
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current30 A30 A-
Rds On Drain Source Resistance13.5 mOhms13.5 mOhms-
ConfigurationSingleSingle-
TradenameOptiMOSOptiMOS-
PackagingReelReelReel
Height2.3 mm2.3 mm2.3 mm
Length6.5 mm6.5 mm6.5 mm
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesG IPD135N03L IPD135N3LGXT SP000796912IPD135N03LGBTMA1 IPD135N3LGXT SP000236951IPD135N3LGXT SP000236951
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Vgs Gate Source Voltage-20 V-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Pd Power Dissipation-31 W-
Channel Mode-Enhancement-
Fall Time-2.2 ns-
Rise Time-3 ns-
Typical Turn Off Delay Time-12 ns-
Typical Turn On Delay Time-3 ns-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD135N03LGATMA1 MOSFET N-Ch 30V 30A DPAK-2
IPD135N03L G MOSFET N-Ch 30V 30A DPAK-2 OptiMOS 3
IPD135N03LGBTMA1 LV POWER MOS
IPD135N03LGATMA1 MOSFET N-CH 30V 30A TO252-3
IPD135N03LGXT MOSFET N-CH 30V 30A TO252-3
Infineon Technologies
Infineon Technologies
IPD135N03LGBTMA1 MOSFET LV POWER MOS
IPD135N03L New and Original
IPD135N03L G Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252
IPD135N03L,135N03L,IPD13 New and Original
IPD135N03LG Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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