PartNumber | IPD180N10N3GATMA1 | IPD180N10N3GBTMA1 | IPD180N10N3 G |
Description | MOSFET MV POWER MOS | MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3 | MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm | 6.5 mm |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | G IPD180N10N3 SP000900132 | G IPD180N10N3 IPD18N1N3GXT SP000482438 | IPD180N10N3GBTMA1 IPD18N1N3GXT SP000482438 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 100 V | 100 V |
Id Continuous Drain Current | - | 43 A | 43 A |
Rds On Drain Source Resistance | - | 14.7 mOhms | 14.7 mOhms |
Vgs th Gate Source Threshold Voltage | - | 2 V | 2 V |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Qg Gate Charge | - | 25 nC | 25 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 175 C | + 175 C |
Pd Power Dissipation | - | 71 W | 71 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Tradename | - | OptiMOS | - |
Series | - | XPD180N10 | - |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Forward Transconductance Min | - | 20 S | 20 S |
Fall Time | - | 5 ns | 5 ns |
Rise Time | - | 12 ns | 12 ns |
Typical Turn Off Delay Time | - | 19 ns | 19 ns |
Typical Turn On Delay Time | - | 12 ns | 12 ns |