 | |  | |
| PartNumber | IPD200N15N3GATMA1 | IPD200N15N3GBTMA1 | IPD20N03L |
| Description | MOSFET MV POWER MOS | MOSFET N-Ch 150V 50A DPAK-2 OptiMOS 3 | MOSFET N-CH 30V 30A DPAK |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 150 V | 150 V | - |
| Id Continuous Drain Current | 50 A | 50 A | - |
| Rds On Drain Source Resistance | 20 mOhms | 16 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 23 nC | 31 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 150 W | 150 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | OptiMOS 3 | XPD200N15 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 29 S | 29 S | - |
| Fall Time | 6 ns | 6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11 ns | 11 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 23 ns | 23 ns | - |
| Typical Turn On Delay Time | 14 ns | 14 ns | - |
| Part # Aliases | G IPD200N15N3 SP001127820 | G IPD200N15N3 IPD200N15N3GXT SP000386665 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD200N15N3GATMA1 | MOSFET MV POWER MOS | |
| IPD200N15N3GATMA1 | MOSFET N-CH 150V 50A TO252-3 | ||
| IPD200N15N3GBTMA1 | MOSFET N-CH 150V 50A TO252-3 | ||
| IPD20N03L | MOSFET N-CH 30V 30A DPAK | ||
| IPD20N03L G | MOSFET N-CH 30V 30A DPAK | ||
Infineon Technologies |
IPD200N15N3GBTMA1 | MOSFET N-Ch 150V 50A DPAK-2 OptiMOS 3 | |
| IPD200N15N3 | New and Original | ||
| IPD200N15N3 G | Trans MOSFET N-CH 150V 50A 3-Pin TO-252 T/R (Alt: IPD200N15N3 G) | ||
| IPD200N15N3G | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 150V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | ||
| IPD200N15N3G 200N15N | New and Original | ||
| IPD200N25N3G | New and Original | ||
| IPD20N03 | New and Original | ||
| IPD20N031 | New and Original | ||
| IPD20N03L P | New and Original | ||
| IPD20N03LAG | New and Original | ||
| IPD20N03LG | MOSFET N-Ch 30V 30A DPAK-2 | ||
| IPD20N03LP | New and Original | ||
| IPD20N06 | New and Original | ||
| IPD20N06L | New and Original | ||
| IPD20N06S2L-65A | New and Original |