PartNumber | IPD30N06S215ATMA2 | IPD30N06S223ATMA1 | IPD30N06S2-15 |
Description | MOSFET N-CHANNEL_55/60V | MOSFET N-CH 55V 30A TO252-3 | MOSFET N-Ch 55V 30A DPAK-2 OptiMOS |
Manufacturer | Infineon | - | INF |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 55 V | - | - |
Id Continuous Drain Current | 30 A | - | - |
Rds On Drain Source Resistance | 11.3 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 41 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 136 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | - | - |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 6.22 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | - | - | - |
Fall Time | 19 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 28 ns | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 32 ns | - | - |
Typical Turn On Delay Time | 13 ns | - | - |
Part # Aliases | IPD30N06S2-15 SP001061724 | - | - |
Unit Weight | 0.139332 oz | - | - |