PartNumber | IPD30N06S2L13ATMA4 | IPD30N06S2L23ATMA1 | IPD30N06S2L-13 |
Description | MOSFET N-CHANNEL_55/60V | MOSFET N-Ch 55V 30A DPAK-2 OptiMOS | MOSFET N-CH 55V 30A TO252-3 |
Manufacturer | Infineon | Infineon | INFINEON |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PG-TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 55 V | 55 V | - |
Id Continuous Drain Current | 30 A | 30 A | - |
Rds On Drain Source Resistance | 13 mOhms | 15.9 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 54 nC | 42 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 136 W | 100 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 21 ns | 9 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 43 ns | 22 ns | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 33 ns | 33 ns | - |
Typical Turn On Delay Time | 16 ns | 7 ns | - |
Part # Aliases | IPD30N06S2L-13 SP001061280 | IPD30N06S2L-23 IPD30N06S2L23XT SP000252168 | - |
Unit Weight | 0.139332 oz | 0.011993 oz | - |