PartNumber | IPD30N08S2L21ATMA1 | IPD30N08S2L-21 | IPD30N08S2L21 |
Description | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | MOSFET, N-CH, 75V,30A, TO252-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | PG-TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 75 V | 75 V | - |
Id Continuous Drain Current | 30 A | 30 A | - |
Rds On Drain Source Resistance | 15.9 mOhms | 20.5 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
Vgs Gate Source Voltage | 20 V | 10 V | - |
Qg Gate Charge | 72 nC | 56 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 136 W | 136 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 11 ns | 11 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 30 ns | 30 ns | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 44 ns | 44 ns | - |
Typical Turn On Delay Time | 9 ns | 9 ns | - |
Part # Aliases | IPD30N08S2L-21 IPD3N8S2L21XT SP000252170 | IPD30N08S2L21ATMA1 IPD3N8S2L21XT SP000252170 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |