IPD30N08S2L

IPD30N08S2L21ATMA1 vs IPD30N08S2L-21 vs IPD30N08S2L21

 
PartNumberIPD30N08S2L21ATMA1IPD30N08S2L-21IPD30N08S2L21
DescriptionMOSFET N-Ch 75V 30A DPAK-2 OptiMOSMOSFET N-Ch 75V 30A DPAK-2 OptiMOSMOSFET, N-CH, 75V,30A, TO252-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3PG-TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage75 V75 V-
Id Continuous Drain Current30 A30 A-
Rds On Drain Source Resistance15.9 mOhms20.5 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage20 V10 V-
Qg Gate Charge72 nC56 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation136 W136 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time11 ns11 ns-
Product TypeMOSFETMOSFET-
Rise Time30 ns30 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time44 ns44 ns-
Typical Turn On Delay Time9 ns9 ns-
Part # AliasesIPD30N08S2L-21 IPD3N8S2L21XT SP000252170IPD30N08S2L21ATMA1 IPD3N8S2L21XT SP000252170-
Unit Weight0.139332 oz0.139332 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD30N08S2L21ATMA1 MOSFET N-Ch 75V 30A DPAK-2 OptiMOS
IPD30N08S2L-21 MOSFET N-Ch 75V 30A DPAK-2 OptiMOS
IPD30N08S2L21ATMA1 MOSFET N-CH 75V 30A TO252-3
IPD30N08S2L-21 Trans MOSFET N-CH 75V 30A 3-Pin TO-252 T/R (Alt: IPD30N08S2L-21)
IPD30N08S2L21ATMA1-CUT TAPE New and Original
IPD30N08S2L21 MOSFET, N-CH, 75V,30A, TO252-3
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