IPD350

IPD350N06L G vs IPD350N06LG vs IPD350N06LGBTMA1

 
PartNumberIPD350N06L GIPD350N06LGIPD350N06LGBTMA1
DescriptionMOSFET N-Ch 60V 29A DPAK-2Trans MOSFET N-CH 60V 29A 3-Pin TO-252 T/R (Alt: IPD350N06L G)MOSFET N-CH 60V 29A DPAK
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePG-TO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current29 A--
Rds On Drain Source Resistance35 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge10 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation68 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesOptiMOS 2--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time21 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time29 ns--
Typical Turn On Delay Time6 ns--
Part # AliasesIPD350N06LGBTMA1 IPD35N6LGXT SP000443746--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD350N06L G MOSFET N-Ch 60V 29A DPAK-2
IPD350N06LGBUMA1 MOSFET N-CH 60V 29A DPAK
IPD350N06LGBTMA1 MOSFET N-CH 60V 29A DPAK
IPD350N06LGBTMA1-CUT TAPE New and Original
IPD350N06L G Trans MOSFET N-CH 60V 29A 3-Pin(2+Tab) TO-252
IPD350N06LG Trans MOSFET N-CH 60V 29A 3-Pin TO-252 T/R (Alt: IPD350N06L G)
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