| PartNumber | IPD50N04S3-08 | IPD50N04S3-09 | IPD50N04S308ATMA1 |
| Description | MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T | MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T | MOSFET N-CHANNEL_30/40V |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 50 A | 50 A | - |
| Rds On Drain Source Resistance | 8 mOhms | 9 mOhms | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 68 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Series | OptiMOS-T | OptiMOS-T | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 6 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 7 ns | - | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 16 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Part # Aliases | IPD50N04S308ATMA1 IPD5N4S38XT SP000261218 | IPD50N04S309ATMA1 IPD5N4S39XT SP000415582 | IPD50N04S3-08 IPD5N4S38XT SP000261218 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |